Infineon AUIRF7379QTR: A High-Performance Dual Channel Automotive MOSFET for Advanced Switching Applications
The relentless drive towards vehicle electrification and advanced driver-assistance systems (ADAS) demands power switching components that deliver uncompromising efficiency, reliability, and power density. Addressing these core automotive needs, Infineon Technologies has developed the AUIRF7379QTR, a sophisticated dual N-channel MOSFET that sets a new benchmark for performance in demanding switching applications.
This device integrates two advanced N-channel MOSFETs in a single, compact PQFN 5x6mm package. Built using Infineon's proprietary OptiMOS™ technology, the AUIRF7379QTR is engineered for exceptional electrical performance and thermal management. A key highlight is its extremely low typical on-state resistance (R DS(on)) of just 1.8 mΩ per channel at 10 V. This minimal resistance is critical for minimizing conduction losses, leading to higher system efficiency, reduced heat generation, and improved fuel economy or extended battery range in electric vehicles.
Designed specifically for the harsh automotive environment, the component is AEC-Q101 qualified, ensuring it meets the stringent reliability standards required for automotive applications. Its robustness is further enhanced with a wide operating voltage range, making it an ideal choice for handling high inrush currents in 12V and 48V automotive systems. Common applications include driving high-power solenoids, motors, and actuators, as well as serving in advanced switching roles within DC-DC converters, battery management systems (BMS), and electronic power steering (EPS) systems.
The dual-channel configuration offers significant advantages for circuit designers. It allows for a more compact PCB layout by reducing the component count and simplifying the gate drive circuitry. This integration is vital for modern ECUs (Electronic Control Units) where space is at a premium. Furthermore, the package's exposed pad provides superior thermal conductivity, efficiently transferring heat from the die to the PCB, thereby enhancing the device's ability to sustain high power levels without overheating.
In summary, the Infineon AUIRF7379QTR represents a powerful solution for engineers designing the next generation of automotive electronic systems. Its blend of ultra-low R DS(on), dual-channel integration, and proven automotive ruggedness makes it a superior choice for enhancing performance and reliability.
ICGOOFIND: The Infineon AUIRF7379QTR is a top-tier dual N-channel MOSFET that delivers high efficiency, power density, and reliability for advanced 12V/48V automotive switching applications, thanks to its OptiMOS™ technology and compact package.
Keywords: Automotive MOSFET, OptiMOS™ Technology, Low R DS(on), Dual Channel, AEC-Q101 Qualified
