Infineon IPP050N10NF2S: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

In the realm of modern power electronics, achieving higher efficiency and power density is a constant pursuit. The Infineon IPP050N10NF2S, a member of the esteemed OptiMOS™ 5 power MOSFET family, stands out as a pivotal component engineered to meet these demanding challenges. This N-channel MOSFET is designed to deliver exceptional performance in a wide array of applications, from server and telecom power supplies to industrial motor drives and solar inverters.

Built on Infineon’s advanced super-junction technology, this 100 V MOSFET is optimized for high-frequency switching operations. A key to its superior performance is its exceptionally low figure-of-merit (R DS(on) Q G), which directly translates to minimized switching and conduction losses. This allows power conversion systems to operate at higher efficiencies, reducing energy waste and thermal load. The device boasts an ultra-low on-state resistance (R DS(on)) of just 5.0 mΩ maximum, which is instrumental in enhancing overall system efficiency, particularly in high-current applications.

The IPP050N10NF2S is also housed in a TO-leadless (TOLL) package, which offers significant advantages over traditional packages like the D2PAK. The TOLL package features a very low parasitic inductance and excellent thermal performance due to its large exposed cooling pad. This compact form factor enables designers to achieve higher power density, making it an ideal choice for space-constrained applications that require robust thermal management.

Furthermore, this MOSFET is designed with reliability in mind. It offers a high maximum drain current (I D) and is qualified for industrial and automotive applications, ensuring robust operation even under strenuous conditions. Its fast switching capability and high avalanche ruggedness contribute to the overall durability and longevity of the end product.

ICGOOODFIND: The Infineon IPP050N10NF2S is a benchmark in power semiconductor technology, offering a compelling blend of ultra-low resistance, high switching speed, and superior thermal performance in a compact package. It empowers designers to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: Power MOSFET, High Efficiency, OptiMOS 5, Low RDS(on), Power Density