Infineon IPD050N10N5ATMA1 100V N-Channel Power MOSFET for High-Efficiency Automotive Applications

The relentless drive towards vehicle electrification, advanced driver-assistance systems (ADAS), and more sophisticated onboard electronics demands power components that deliver uncompromising efficiency, reliability, and power density. Addressing these stringent requirements, the Infineon IPD050N10N5ATMA1 100V N-channel power MOSFET emerges as a premier solution engineered specifically for the challenging automotive environment.

This MOSFET is built on Infineon's advanced OptiMOS 5 technology, a platform renowned for its exceptional performance in switching applications. A key metric for efficiency, especially in high-frequency switching regulators and motor control circuits, is the figure-of-merit (FOV), defined by R DS(on) Q G. The IPD050N10N5ATMA1 excels here, boasting an ultra-low on-state resistance (R DS(on)) of just 5.0 mΩ maximum at 10 V. This minimal resistance directly translates to significantly reduced conduction losses, allowing for more current handling in a smaller footprint and less wasted energy dissipated as heat.

Complementing its low R DS(on) is an optimized gate charge (Q G). The low gate charge ensures swift switching transitions, which is critical for operating at higher frequencies. Faster switching enables the use of smaller passive components like inductors and capacitors, leading to overall more compact and lighter system designs. This combination is vital for applications such as DC-DC converters in 48V systems, electric power steering (EPS), and braking systems, where efficiency and space are at a premium.

Beyond pure electrical performance, the component is designed for superior robustness and reliability. It offers a wide operating temperature range and is characterized for avalanche ruggedness, ensuring stable operation under the harsh conditions typical in automotive applications, including large voltage transients and extreme thermal cycling. Furthermore, it is AEC-Q101 qualified, guaranteeing that it meets the rigorous quality and reliability standards mandated by the automotive industry.

ICGOOODFIND: The Infineon IPD050N10N5ATMA1 stands out as a top-tier automotive-grade power MOSFET. Its exceptional blend of ultra-low R DS(on), low gate charge, and high robustness makes it an ideal choice for designers aiming to maximize efficiency and power density in next-generation 12V and 48V automotive systems, from body electronics to powertrain modules.

Keywords: Automotive-Grade, OptiMOS 5 Technology, Low R DS(on), High Efficiency, AEC-Q101 Qualified.